ترازیستور irf830

تخفیف ویژه

■ TYPICAL RDS(on) = 1.35 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
DESCRIPTION
This power MOSFET is designed using the
company’s consolidated strip layout-based MESH
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER

لینک دانلود دیتاشیت :

http://www.alldatasheet.com/datasheet-pdf/pdf/22403/STMICROELECTRONICS/IRF830.html